Design of ring oscillator structures for measuring isolated NBTI and PBTI

Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effects in digital circuits are presented for high-k metal-gate devices. The proposed test structures enable simultaneous stress of all devices under test in either NBTI or PBTI mode and measure frequency...

Full description

Saved in:
Bibliographic Details
Main Authors: Kim, Tony Tae-Hyoung, Lu, Pong-Fei., Kim, Chris H.
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/106580
http://hdl.handle.net/10220/17772
http://dx.doi.org/10.1109/ISCAS.2012.6271555
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effects in digital circuits are presented for high-k metal-gate devices. The proposed test structures enable simultaneous stress of all devices under test in either NBTI or PBTI mode and measure frequency or threshold voltage shifts. The mathematical derivation also shows that the structure for frequency degradation measurement can directly be used for estimating the portion of the NBTI and PBTI in the conventional ring oscillator. The proposed test structures including beat frequency sensing circuitry have been designed in a 0.9V, 45nm SOI technology.