Design of ring oscillator structures for measuring isolated NBTI and PBTI

Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effects in digital circuits are presented for high-k metal-gate devices. The proposed test structures enable simultaneous stress of all devices under test in either NBTI or PBTI mode and measure frequency...

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Bibliographic Details
Main Authors: Kim, Tony Tae-Hyoung, Lu, Pong-Fei., Kim, Chris H.
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/106580
http://hdl.handle.net/10220/17772
http://dx.doi.org/10.1109/ISCAS.2012.6271555
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Institution: Nanyang Technological University
Language: English

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