Ultra-low power high efficient rectifiers with 3T/4T double-gate MOSFETs for RFID applications

• Main Authors: Kim, Tony Tae-Hyoung, Vaddi, Ramesh.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/84509; http://hdl.handle.net/10220/7529
• Institution: Nanyang Technological University

Recently, multi-gate MOSFETs such as double-gate MOSFETs have been identified as inevitable inclusion for future nano-scale circuit design. This paper explores the scope of tiedgate (3T), independent gate (4T), symmetric and asymmetric features of double-gate MOSFETs (DGMOSFETs) for ultra-low power...