Ultra-low power high efficient rectifiers with 3T/4T double-gate MOSFETs for RFID applications

• المؤلفون الرئيسيون: Kim, Tony Tae-Hyoung, Vaddi, Ramesh.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/84509; http://hdl.handle.net/10220/7529
• المؤسسة: Nanyang Technological University

Recently, multi-gate MOSFETs such as double-gate MOSFETs have been identified as inevitable inclusion for future nano-scale circuit design. This paper explores the scope of tiedgate (3T), independent gate (4T), symmetric and asymmetric features of double-gate MOSFETs (DGMOSFETs) for ultra-low power...