Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design

• Main Authors: Vaddi, Ramesh., Agarwal, Rajendra P., Dasgupta, Sudeb., Kim, Tony Tae-Hyoung
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• Online Access: https://hdl.handle.net/10356/94092; http://hdl.handle.net/10220/7491
• Institution: Nanyang Technological University

Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more otpimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison t...