Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design

• المؤلفون الرئيسيون: Vaddi, Ramesh., Agarwal, Rajendra P., Dasgupta, Sudeb., Kim, Tony Tae-Hyoung
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94092; http://hdl.handle.net/10220/7491

Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more otpimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison t...