Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design

Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison t...

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Bibliographic Details
Main Authors: Kim, Tony Tae-Hyoung, Vaddi, Ramesh., Agarwal, Rajendra P., Dasgupta, Sudeb.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2011
Subjects:
Online Access:https://hdl.handle.net/10356/93900
http://hdl.handle.net/10220/7113
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Institution: Nanyang Technological University
Language: English