Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design

Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison t...

Full description

Saved in:
Bibliographic Details
Main Authors: Kim, Tony Tae-Hyoung, Vaddi, Ramesh., Agarwal, Rajendra P., Dasgupta, Sudeb.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2011
Subjects:
Online Access:https://hdl.handle.net/10356/93900
http://hdl.handle.net/10220/7113
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-93900
record_format dspace
spelling sg-ntu-dr.10356-939002020-03-07T14:02:36Z Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design Kim, Tony Tae-Hyoung Vaddi, Ramesh. Agarwal, Rajendra P. Dasgupta, Sudeb. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison to those for strong inversion-based design. In this paper, various configurations of DGMOSFETs, such as tied/independent gates and symmetric/asymmetric gate oxide thickness are explored for ultra-low power and high efficient radio frequency identification (RFID) design. Comparison of bulk CMOS with DGMOSFETs has been conducted in ultra-low power subthreshold digital logic design and rectifier design, emphasizing the scope of the nano-scale DGMOSFET technology for future ultra-low power systems. The DGMOSFET-based subthreshold logic improves energy efficiency by more than 40% compared to the bulk CMOS-based logic at 32 nm. Among the various DGMOSFET configurations for RFID rectifiers, symmetric tied-gate DGMOSFET has the best power conversion efficiency and the lowest power consumption. Published version 2011-09-29T02:39:53Z 2019-12-06T18:47:24Z 2011-09-29T02:39:53Z 2019-12-06T18:47:24Z 2011 2011 Journal Article Vaddi, R., Agarwal, R. P., Dasgupta, S., & Kim, T. T. (2011). Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design. Journal of Low Power Electronics and Applications, 1(2), 277-302. 2079-9268 https://hdl.handle.net/10356/93900 http://hdl.handle.net/10220/7113 10.3390/jlpea1020277 160471 en Low power electronics and applications © 2011 MDPI. This paper was published in Low Power Electronics and Applications and is made available as an electronic reprint (preprint) with permission of MDPI. The paper can be found at DOI: http://dx.doi.org/10.3390/jlpea1020277.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 26 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Kim, Tony Tae-Hyoung
Vaddi, Ramesh.
Agarwal, Rajendra P.
Dasgupta, Sudeb.
Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
description Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison to those for strong inversion-based design. In this paper, various configurations of DGMOSFETs, such as tied/independent gates and symmetric/asymmetric gate oxide thickness are explored for ultra-low power and high efficient radio frequency identification (RFID) design. Comparison of bulk CMOS with DGMOSFETs has been conducted in ultra-low power subthreshold digital logic design and rectifier design, emphasizing the scope of the nano-scale DGMOSFET technology for future ultra-low power systems. The DGMOSFET-based subthreshold logic improves energy efficiency by more than 40% compared to the bulk CMOS-based logic at 32 nm. Among the various DGMOSFET configurations for RFID rectifiers, symmetric tied-gate DGMOSFET has the best power conversion efficiency and the lowest power consumption.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Kim, Tony Tae-Hyoung
Vaddi, Ramesh.
Agarwal, Rajendra P.
Dasgupta, Sudeb.
format Article
author Kim, Tony Tae-Hyoung
Vaddi, Ramesh.
Agarwal, Rajendra P.
Dasgupta, Sudeb.
author_sort Kim, Tony Tae-Hyoung
title Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
title_short Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
title_full Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
title_fullStr Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
title_full_unstemmed Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
title_sort design and analysis of double-gate mosfets for ultra-low power radio frequency identification (rfid) : device and circuit co-design
publishDate 2011
url https://hdl.handle.net/10356/93900
http://hdl.handle.net/10220/7113
_version_ 1681035907697737728