Online condition monitoring of IGBT modules using voltage change rate identification

As insulated gate bipolar transistors (IGBTs) have gained an important status in a wide range of applications, reliability, and availability of these units are of paramount importance to meet stringent requirements spelled in aviation and industrial standards. Reliability of a power converter is mai...

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Main Authors: Pou, Josep, Mohamed Sathik, Mohamed Halick, Prasanth, S., Sasongko, Firman
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
Subjects:
Online Access:https://hdl.handle.net/10356/107569
http://hdl.handle.net/10220/50316
http://dx.doi.org/10.1016/j.microrel.2018.07.040
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1075692019-12-06T22:34:22Z Online condition monitoring of IGBT modules using voltage change rate identification Pou, Josep Mohamed Sathik, Mohamed Halick Prasanth, S. Sasongko, Firman School of Electrical and Electronic Engineering Rolls-Royce @ NTU Corporate Lab Insulated Gate Bipolar Transistors Voltage Change Rate Engineering::Electrical and electronic engineering As insulated gate bipolar transistors (IGBTs) have gained an important status in a wide range of applications, reliability, and availability of these units are of paramount importance to meet stringent requirements spelled in aviation and industrial standards. Reliability of a power converter is mainly verbalized by the failure rate of power modules. Hence, monitoring IGBTs degradation is very crucial to give early sign of power-module-related failures in power converters. This paper proposes a new potential precursor parameter for IGBTs based on voltage change rate to detect early failure of power modules. The proposed method pays more attention to power modules with chip solder fatigue and bond-wire lift off as a major failure mechanism. An experimental setup using an accelerated power cycling machine is constructed to trigger degradations and failures on several IGBT modules. The experimental results indicate that voltage change rates of the IGBT modules decrease with ageing over time. It is found that the local damage induced by ageing over time changes the parasitic capacitances of an IGBT that leads to a decrease of the voltage change rate of the device. Accepted version 2019-11-04T02:38:48Z 2019-12-06T22:34:22Z 2019-11-04T02:38:48Z 2019-12-06T22:34:22Z 2018 Journal Article Mohamed Sathik, M. H., Prasanth, S., Sasongko, F., & Pou, J. (2018). Online condition monitoring of IGBT modules using voltage change rate identification. Microelectronics Reliability, 88-90486-492. doi:10.1016/j.microrel.2018.07.040 0026-2714 https://hdl.handle.net/10356/107569 http://hdl.handle.net/10220/50316 http://dx.doi.org/10.1016/j.microrel.2018.07.040 en Microelectronics Reliability © 2018 Elsevier. All rights reserved. This paper was published in Microelectronics Reliability and is made available with permission of Elsevier. 7 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Insulated Gate Bipolar Transistors
Voltage Change Rate
Engineering::Electrical and electronic engineering
spellingShingle Insulated Gate Bipolar Transistors
Voltage Change Rate
Engineering::Electrical and electronic engineering
Pou, Josep
Mohamed Sathik, Mohamed Halick
Prasanth, S.
Sasongko, Firman
Online condition monitoring of IGBT modules using voltage change rate identification
description As insulated gate bipolar transistors (IGBTs) have gained an important status in a wide range of applications, reliability, and availability of these units are of paramount importance to meet stringent requirements spelled in aviation and industrial standards. Reliability of a power converter is mainly verbalized by the failure rate of power modules. Hence, monitoring IGBTs degradation is very crucial to give early sign of power-module-related failures in power converters. This paper proposes a new potential precursor parameter for IGBTs based on voltage change rate to detect early failure of power modules. The proposed method pays more attention to power modules with chip solder fatigue and bond-wire lift off as a major failure mechanism. An experimental setup using an accelerated power cycling machine is constructed to trigger degradations and failures on several IGBT modules. The experimental results indicate that voltage change rates of the IGBT modules decrease with ageing over time. It is found that the local damage induced by ageing over time changes the parasitic capacitances of an IGBT that leads to a decrease of the voltage change rate of the device.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Pou, Josep
Mohamed Sathik, Mohamed Halick
Prasanth, S.
Sasongko, Firman
format Article
author Pou, Josep
Mohamed Sathik, Mohamed Halick
Prasanth, S.
Sasongko, Firman
author_sort Pou, Josep
title Online condition monitoring of IGBT modules using voltage change rate identification
title_short Online condition monitoring of IGBT modules using voltage change rate identification
title_full Online condition monitoring of IGBT modules using voltage change rate identification
title_fullStr Online condition monitoring of IGBT modules using voltage change rate identification
title_full_unstemmed Online condition monitoring of IGBT modules using voltage change rate identification
title_sort online condition monitoring of igbt modules using voltage change rate identification
publishDate 2019
url https://hdl.handle.net/10356/107569
http://hdl.handle.net/10220/50316
http://dx.doi.org/10.1016/j.microrel.2018.07.040
_version_ 1681044399766634496