Online condition monitoring of IGBT modules using voltage change rate identification

• Main Authors: Pou, Josep, Mohamed Sathik, Mohamed Halick, Prasanth, S., Sasongko, Firman
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Insulated Gate Bipolar Transistors; Voltage Change Rate; Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/107569; http://hdl.handle.net/10220/50316; http://dx.doi.org/10.1016/j.microrel.2018.07.040
• Institution: Nanyang Technological University

As insulated gate bipolar transistors (IGBTs) have gained an important status in a wide range of applications, reliability, and availability of these units are of paramount importance to meet stringent requirements spelled in aviation and industrial standards. Reliability of a power converter is mai...