Performance characterisation and design issues of low voltage BiCMOS digital circuits

• Main Author: Cheong, Chee Seng.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Theses and Dissertations
• Language: English
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• Online Access: http://hdl.handle.net/10356/13150
• Institution: Nanyang Technological University

This report addresses the work done on the power and speed optimisation of 4 different BiCMOS gate structures using 3 sub-micron technologies; namely 1.5V/0.35um, 2.2V/0.5|im and 3.3V/0.8(im for several fan-in fan-out conditions. The BiCMOS structures studied in this project encompass the Bootstrapped BiCMOS (BS BiCMOS), Bootstrapped Full-Swing BiCMOS (BS-FS BiCMOS), Feedback BiCMOS (FB BiCMOS) and Transient Saturated Full-Swing BiCMOS (TS-FS BiCMOS). The BiCMOS performance was characterised by the performance of power and speed in 2 input NAND/AND and NOR/OR gates. The study also covers performance and characterisation using low quality and high quality BJT fabrication processes.