One-step synthesis of metal/semiconductor heterostructure NbS2/MoS2

• Main Authors: Fu, Qundong, Wang, Xiaowei, Zhou, Jiadong, Xia, Juan, Zeng, Qinsheng, Lv, Danhui, Zhu, Chao, Wang, Xiaolei, Shen, Yue, Li, Xiaomin, Hua, Younan, Liu, Fucai, Shen, Zexiang, Jin, Chuanhong, Liu, Zheng
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Science::Physics; Semiconductor Heterostructure; Chemical Vapor Deposition
• Online Access: https://hdl.handle.net/10356/137170
• Institution: Nanyang Technological University

Chemical vapor deposition (CVD) has proven its surpassing advantages, such as larger scale, interlayer orientation control, and clean interface, in the synthesis of transitional metal dichalcogenide (TMDC) semiconductor/semiconductor van der Waals (vdW) heterostructures. However, it is suffering problems of high melting points and low chemical reactivity of metal oxide feedstocks in the preparation of high-quality metal/semiconductor (M/S) TMDC vdW heterostructures. Here, for the first time, we report the synthesis of the M/S TMDC vdW heterostructure NbS 2 /MoS 2 via a one-step halide-assisted CVD method, which effectively overcomes the drawbacks of metal oxide precursors. This one-step method provides the high quality and clean interface of the NbS 2 /MoS 2 heterostructure, which has been proved by the transmission electron microscopy characterization. A mechanism that MoS 2 finishes the growth first and subsequently serves as a superior substrate for the growth of NbS 2 is proposed. This novel method will open up new opportunities in the syntheses of other M/S TMDC vdW heterostructures and will facilitate the research of the TMDC M/S interface.