Room-temperature, wide-band, quantum well infrared photodetector for microwave optical links at 4.9 μm wavelength

High-speed, room-temperature, quantum well infrared photodetectors (QWIPs) at λ ∼ 4.9 μm have been realized in a strain compensated In0.1Ga0.9As/Al0.4Ga0.6As heterostructure grown on a GaAs substrate. The high-speed properties at room temperature have been optimized by using a specifically designed...

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Bibliographic Details
Main Authors: Rodriguez, Etienne, Mottaghizadeh, Alireza, Gacemi, Djamal, Palaferri, Daniele, Asghari, Zahra, Jeannin, Mathieu, Vasanelli, Angela, Bigioli, Azzurra, Todorov, Yanko, Beck, Mattias, Faist, Jerome, Wang, Qi Jie, Sirtori, Carlo
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Online Access:https://hdl.handle.net/10356/137485
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Institution: Nanyang Technological University
Language: English