Room-temperature, wide-band, quantum well infrared photodetector for microwave optical links at 4.9 μm wavelength
High-speed, room-temperature, quantum well infrared photodetectors (QWIPs) at λ ∼ 4.9 μm have been realized in a strain compensated In0.1Ga0.9As/Al0.4Ga0.6As heterostructure grown on a GaAs substrate. The high-speed properties at room temperature have been optimized by using a specifically designed...
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Main Authors: | Rodriguez, Etienne, Mottaghizadeh, Alireza, Gacemi, Djamal, Palaferri, Daniele, Asghari, Zahra, Jeannin, Mathieu, Vasanelli, Angela, Bigioli, Azzurra, Todorov, Yanko, Beck, Mattias, Faist, Jerome, Wang, Qi Jie, Sirtori, Carlo |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/137485 |
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Institution: | Nanyang Technological University |
Language: | English |
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