Room-temperature, wide-band, quantum well infrared photodetector for microwave optical links at 4.9 μm wavelength

• Main Authors: Rodriguez, Etienne, Mottaghizadeh, Alireza, Gacemi, Djamal, Palaferri, Daniele, Asghari, Zahra, Jeannin, Mathieu, Vasanelli, Angela, Bigioli, Azzurra, Todorov, Yanko, Beck, Mattias, Faist, Jerome, Wang, Qi Jie, Sirtori, Carlo
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Quantum Devices; Photodetectors
• Online Access: https://hdl.handle.net/10356/137485
• Institution: Nanyang Technological University

High-speed, room-temperature, quantum well infrared photodetectors (QWIPs) at λ ∼ 4.9 μm have been realized in a strain compensated In0.1Ga0.9As/Al0.4Ga0.6As heterostructure grown on a GaAs substrate. The high-speed properties at room temperature have been optimized by using a specifically designed air-bridge structure, which greatly reduces the time constant of the effective RC circuit, thus, allowing transmission and detection of high-frequency signals. By modulating a high-speed quantum cascade laser (QCL) centered at λ ∼ 4.7 μm, we were able to record a modulation of the photocurrent up to ∼26 GHz, which is limited by our setup. At 300 K and under a bias voltage of ?5 V our device shows high responsivity and detectivity of 100 mA/W and 1 × 107 Jones, respectively. The developed high-performance QWIPs at this wavelength are highly promising for optical heterodyne measurement, high-speed free space communications in microwave optical links and frequency comb QCLs characterisations.