Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency
A low voltage (−20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 1014 /cm3) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky dio...
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Main Authors: | , , , , , , , , , |
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格式: | Article |
語言: | English |
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2020
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在線閱讀: | https://hdl.handle.net/10356/137841 |
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機構: | Nanyang Technological University |
語言: | English |