Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency

A low voltage (−20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 1014 /cm3) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky dio...

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Bibliographic Details
Main Authors: Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P., Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/137841
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Institution: Nanyang Technological University
Language: English

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