GaN-on-Silicon integration technology
This work presents our recent progress on addressing two major challenges to realizing GaN-Silicon integration namely epitaxial growth of GaN-on-Silicon and CMOS-compatible process. We have successfully demonstrated 0.3-μm gate-length GaN HEMTs on 8-inch Si(111) substrate with fT of 28GHz and fmax o...
Saved in:
Main Authors: | , , , , , , , , , , |
---|---|
Other Authors: | |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
|
Online Access: | https://hdl.handle.net/10356/98842 http://hdl.handle.net/10220/12826 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |