GaN-on-Silicon integration technology
This work presents our recent progress on addressing two major challenges to realizing GaN-Silicon integration namely epitaxial growth of GaN-on-Silicon and CMOS-compatible process. We have successfully demonstrated 0.3-μm gate-length GaN HEMTs on 8-inch Si(111) substrate with fT of 28GHz and fmax o...
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Main Authors: | Ng, Geok Ing, Arulkumaran, Subramaniam, Vicknesh, Sahmuganathan, Wang, H., Ang, K. S., Kumar, C. M. Manoj, Ranjan, K., Lo, Guo-Qiang, Tripathy, Sudhiranjan, Boon, Chirn Chye, Lim, Wei Meng |
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其他作者: | School of Electrical and Electronic Engineering |
格式: | Conference or Workshop Item |
語言: | English |
出版: |
2013
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在線閱讀: | https://hdl.handle.net/10356/98842 http://hdl.handle.net/10220/12826 |
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機構: | Nanyang Technological University |
語言: | English |
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