GaN-on-Silicon integration technology

This work presents our recent progress on addressing two major challenges to realizing GaN-Silicon integration namely epitaxial growth of GaN-on-Silicon and CMOS-compatible process. We have successfully demonstrated 0.3-μm gate-length GaN HEMTs on 8-inch Si(111) substrate with fT of 28GHz and fmax o...

全面介紹

Saved in:
書目詳細資料
Main Authors: Ng, Geok Ing, Arulkumaran, Subramaniam, Vicknesh, Sahmuganathan, Wang, H., Ang, K. S., Kumar, C. M. Manoj, Ranjan, K., Lo, Guo-Qiang, Tripathy, Sudhiranjan, Boon, Chirn Chye, Lim, Wei Meng
其他作者: School of Electrical and Electronic Engineering
格式: Conference or Workshop Item
語言:English
出版: 2013
在線閱讀:https://hdl.handle.net/10356/98842
http://hdl.handle.net/10220/12826
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!
機構: Nanyang Technological University
語言: English

相似書籍