MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS

• Main Authors: Loke, Wan Khai, Lee, Kwang Hong, Wang, Yue, Tan, Chuan Seng, Fitzgerald, Eugene A., Yoon, Soon Fatt
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; III–V/Si Integration; Bipolar Transistors
• Online Access: https://hdl.handle.net/10356/138539
• Institution: Nanyang Technological University

Heterojunction bipolar transistors (HBTs) with an In0.49Ga0.51P emitter and a GaAs base and collector were fabricated on epitaxial films grown directly onto Si substrates using a thin germanium (100%) buffer layer. All the materials (Ge, GaAs, In0.49Ga0.51P) were grown epitaxially using metal-organi...