Printed high mobility AMOS thin film transistors
The report is done to investigate the effects the addition of gallium to the IZO thin film transistor and hydrogen peroxide to the IGZO solution processed thin film transistor. One major issue of the IZO Thin film transistor is with the instability of the device caused by the formation of vacancy de...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
Nanyang Technological University
2020
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/138632 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|