γ-ray radiation effects on an HfO2-based resistive memory device

• Main Authors: Hu, Shaogang, Liu, Yang Liu, Chen, Tupei, Guo, Qi, Li, Yu-Dong, Zhang, Xing-Yao, Deng, L.J., Yu, Qi, Yin, You, Hosaka, Sumio
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; γ Ray; Hafnium Oxide
• Online Access: https://hdl.handle.net/10356/139839
• Institution: Nanyang Technological University

In this paper, electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after γ-ray radiation with various total ionizing doses (TIDs). The device can still function properly even if irradiated with a TID of 20 Mrad(Si). The small changes of resistance states and set/reset voltages induced by γ-ray radiation can hardly influence the proper function of the device. The γ-ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure. The radiation effects on the resistive switching memory device show little dependence on the cell area. The results suggest that the HfO2-based resistive switching memory device has good γ-ray radiation-resistant capability.