Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant

10.1109/LED.2009.2020613

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Bibliographic Details
Main Authors: He, W., Zhang, L., Chan, D.S.H., Cho, B.-J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82111
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Institution: National University of Singapore