Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant

10.1109/LED.2009.2020613

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Bibliographic Details
Main Authors:	He, W., Zhang, L., Chan, D.S.H., Cho, B.-J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Crystallization Cubic structure Hafnium oxide High-κ dielectric Lanthanum oxide
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82111
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Institution:	National University of Singapore

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Summary:	10.1109/LED.2009.2020613

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