Resistive switching devices based on halide perovskites

• Main Author: Cheong, Cheng Hao
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics; Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/140178
• Institution: Nanyang Technological University

Resistance switching is a relatively new phenomenon that has been incorporated into fabricating non-volatile memory. Resistive random-access memory was the proposed future developments that utilize the resistance switching characteristic to replace flash memory. Thus, multiple researches were invest...