Ultra-thin GaAs double-junction solar cell with carbon-doped emitter

We address the challenge in depositing ultra-thin GaAs cells (<200 nm) using a more scalable process (metal-organic chemical vapor deposition). We present results for a GaAs/GaAs double-junction solar cell with a 110-nm-thick top cell. Current, voltage, fill factor, and efficiency of this archite...

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Main Authors: Ren, Zekun, Thway, Maung, Liu, Zhe, Wang, Yue, Ke, Cangming, Yaung, Kevin Nay, Wang, Bing, Tan, Chuan Seng, Lin, Fen, Aberle, Armin Gerhad, Buonassisi, Tonio, Peters, Ian Marius
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/140321
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1403212020-05-28T03:01:38Z Ultra-thin GaAs double-junction solar cell with carbon-doped emitter Ren, Zekun Thway, Maung Liu, Zhe Wang, Yue Ke, Cangming Yaung, Kevin Nay Wang, Bing Tan, Chuan Seng Lin, Fen Aberle, Armin Gerhad Buonassisi, Tonio Peters, Ian Marius School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering One Sun Tandem Solar Cell Ultra-thin GaAs We address the challenge in depositing ultra-thin GaAs cells (<200 nm) using a more scalable process (metal-organic chemical vapor deposition). We present results for a GaAs/GaAs double-junction solar cell with a 110-nm-thick top cell. Current, voltage, fill factor, and efficiency of this architecture are improved by replacing the zinc doping in the emitter of the top cell with carbon doping. We find that the carbon doping results in a well-defined active junction profile that agrees well with the secondary ion mass spectroscopy measurement. Additionally, we find that the carbon doping coincides with the incorporation of indium in the emitter. We postulate that the incorporation of indium relieves stress in the material, which results in a smoother morphology of the GaAs film. Finally, we show the efficiency achieved with the carbon-doping process is 19.2% for the GaAs/GaAs dual junction cell. The open circuit voltage is 1.087 V for the ultra-thin (110 nm) GaAs top cell and 2.08 V for the dual junction cell. NRF (Natl Research Foundation, S’pore) EDB (Economic Devt. Board, S’pore) 2020-05-28T03:01:37Z 2020-05-28T03:01:37Z 2018 Journal Article Ren, Z., Thway, M., Liu, Z., Wang, Y., Ke, C., Yaung, K. N., . . . Peters, I. M. (2018). Ultra-thin GaAs double-junction solar cell with carbon-doped emitter. IEEE Journal of Photovoltaics, 8(6), 1627-1634. doi:10.1109/JPHOTOV.2018.2870721 2156-3381 https://hdl.handle.net/10356/140321 10.1109/JPHOTOV.2018.2870721 2-s2.0-85054534614 6 8 1627 1634 en IEEE Journal of Photovoltaics © 2018 IEEE. All rights reserved.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
One Sun Tandem Solar Cell
Ultra-thin GaAs
spellingShingle Engineering::Electrical and electronic engineering
One Sun Tandem Solar Cell
Ultra-thin GaAs
Ren, Zekun
Thway, Maung
Liu, Zhe
Wang, Yue
Ke, Cangming
Yaung, Kevin Nay
Wang, Bing
Tan, Chuan Seng
Lin, Fen
Aberle, Armin Gerhad
Buonassisi, Tonio
Peters, Ian Marius
Ultra-thin GaAs double-junction solar cell with carbon-doped emitter
description We address the challenge in depositing ultra-thin GaAs cells (<200 nm) using a more scalable process (metal-organic chemical vapor deposition). We present results for a GaAs/GaAs double-junction solar cell with a 110-nm-thick top cell. Current, voltage, fill factor, and efficiency of this architecture are improved by replacing the zinc doping in the emitter of the top cell with carbon doping. We find that the carbon doping results in a well-defined active junction profile that agrees well with the secondary ion mass spectroscopy measurement. Additionally, we find that the carbon doping coincides with the incorporation of indium in the emitter. We postulate that the incorporation of indium relieves stress in the material, which results in a smoother morphology of the GaAs film. Finally, we show the efficiency achieved with the carbon-doping process is 19.2% for the GaAs/GaAs dual junction cell. The open circuit voltage is 1.087 V for the ultra-thin (110 nm) GaAs top cell and 2.08 V for the dual junction cell.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Ren, Zekun
Thway, Maung
Liu, Zhe
Wang, Yue
Ke, Cangming
Yaung, Kevin Nay
Wang, Bing
Tan, Chuan Seng
Lin, Fen
Aberle, Armin Gerhad
Buonassisi, Tonio
Peters, Ian Marius
format Article
author Ren, Zekun
Thway, Maung
Liu, Zhe
Wang, Yue
Ke, Cangming
Yaung, Kevin Nay
Wang, Bing
Tan, Chuan Seng
Lin, Fen
Aberle, Armin Gerhad
Buonassisi, Tonio
Peters, Ian Marius
author_sort Ren, Zekun
title Ultra-thin GaAs double-junction solar cell with carbon-doped emitter
title_short Ultra-thin GaAs double-junction solar cell with carbon-doped emitter
title_full Ultra-thin GaAs double-junction solar cell with carbon-doped emitter
title_fullStr Ultra-thin GaAs double-junction solar cell with carbon-doped emitter
title_full_unstemmed Ultra-thin GaAs double-junction solar cell with carbon-doped emitter
title_sort ultra-thin gaas double-junction solar cell with carbon-doped emitter
publishDate 2020
url https://hdl.handle.net/10356/140321
_version_ 1681056309336604672