Ultra-thin GaAs double-junction solar cell with carbon-doped emitter

We address the challenge in depositing ultra-thin GaAs cells (<200 nm) using a more scalable process (metal-organic chemical vapor deposition). We present results for a GaAs/GaAs double-junction solar cell with a 110-nm-thick top cell. Current, voltage, fill factor, and efficiency of this archite...

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Bibliographic Details
Main Authors: Ren, Zekun, Thway, Maung, Liu, Zhe, Wang, Yue, Ke, Cangming, Yaung, Kevin Nay, Wang, Bing, Tan, Chuan Seng, Lin, Fen, Aberle, Armin Gerhad, Buonassisi, Tonio, Peters, Ian Marius
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Online Access:https://hdl.handle.net/10356/140321
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Institution: Nanyang Technological University
Language: English
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