III-V/Si device modeling and circuit simulation

• Main Author: Xu, Haoying
• Other Authors: Zhou Xing
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2020
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/140410
• Institution: Nanyang Technological University

The demand for high performance power electronics devices in electric vehicle, aerospace engineering, and renewable energy is increasing. Traditional silicon-based power devices are reaching their upper performance limit and fail to meet the requirements for higher switching frequency, power efficiency, and operating temperatures. Thus, power electronics industries have to explore for potential semiconductor materials whose performance can match today’s new systems. One of the potential materials is gallium nitride (GaN). Gallium nitride (GaN) based high-electron mobility transistors (HEMTs) have become the most promising for power electronics devices. They are able to provide high electron mobility, high power density, and exceptional wideband performance. Development of a compact model for generic HEMTs is becoming an urgent need for semiconductor industry. A developed process design kit (PDK) that is used for GaN HEMT tapeouts with the calibrated model card to a set of measured GaN HEMT has been provided to simulate static and dynamic characteristics of the given cell for this study. The developed compact model in the PDK is scripted in Verilog-A, and offers the GaN HEMT cell as a symbol under the commercial EDA tool, Cadence Virtuoso for circuit simulations.