Fabrication and characterisation of microelectronic devices, circuits and systems III

• Main Author: Siek, Liter.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/2754
• Institution: Nanyang Technological University

We present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Cons...