Fabrication and characterisation of microelectronic devices, circuits and systems III

We present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Cons...

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Main Author:	Siek, Liter.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Research Report
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:	http://hdl.handle.net/10356/2754
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-2754
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spelling	sg-ntu-dr.10356-27542023-03-04T03:20:35Z Fabrication and characterisation of microelectronic devices, circuits and systems III Siek, Liter. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics We present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flwoing beneath the principle MOS current. RGM 17/99 2008-09-17T09:14:17Z 2008-09-17T09:14:17Z 2001 2001 Research Report http://hdl.handle.net/10356/2754 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Siek, Liter. Fabrication and characterisation of microelectronic devices, circuits and systems III
description	We present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flwoing beneath the principle MOS current.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Siek, Liter.
format	Research Report
author	Siek, Liter.
author_sort	Siek, Liter.
title	Fabrication and characterisation of microelectronic devices, circuits and systems III
title_short	Fabrication and characterisation of microelectronic devices, circuits and systems III
title_full	Fabrication and characterisation of microelectronic devices, circuits and systems III
title_fullStr	Fabrication and characterisation of microelectronic devices, circuits and systems III
title_full_unstemmed	Fabrication and characterisation of microelectronic devices, circuits and systems III
title_sort	fabrication and characterisation of microelectronic devices, circuits and systems iii
publishDate	2008
url	http://hdl.handle.net/10356/2754
_version_	1759854223358427136

Fabrication and characterisation of microelectronic devices, circuits and systems III

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