Fabrication and characterisation of microelectronic devices, circuits and systems III

• المؤلف الرئيسي: Siek, Liter.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Research Report
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/2754

We present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Cons...