Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for drain current make the model suitable to be embedded in circuit simulation and de...

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Main Authors: Qian, Haisheng, Hu, Guangxi, Hu, Laigui, Zhou, Xing, Liu, Ran, Zheng, Lirong
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
Logic Gates
Aluminum Gallium Nitride
Online Access:https://hdl.handle.net/10356/140470
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1404702020-05-29T06:59:16Z Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices Qian, Haisheng Hu, Guangxi Hu, Laigui Zhou, Xing Liu, Ran Zheng, Lirong School of Electrical and Electronic Engineering 2017 IEEE 12th International Conference on ASIC (ASICON) Engineering::Electrical and electronic engineering Logic Gates Aluminum Gallium Nitride Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for drain current make the model suitable to be embedded in circuit simulation and design tools. 2020-05-29T06:59:16Z 2020-05-29T06:59:16Z 2018 Conference Paper Qian, H., Hu, G., Hu, L., Zhou, X., Liu, R., & Zheng, L. (2018). Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices. Proceedings of 2017 IEEE 12th International Conference on ASIC (ASICON), 249-251. doi:10.1109/ASICON.2017.8252459 978-1-5090-6626-1 https://hdl.handle.net/10356/140470 10.1109/ASICON.2017.8252459 2-s2.0-85044790824 249 251 en © 2017 IEEE. All rights reserved.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Logic Gates
Aluminum Gallium Nitride
spellingShingle Engineering::Electrical and electronic engineering
Logic Gates
Aluminum Gallium Nitride
Qian, Haisheng
Hu, Guangxi
Hu, Laigui
Zhou, Xing
Liu, Ran
Zheng, Lirong
Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
description Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for drain current make the model suitable to be embedded in circuit simulation and design tools.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Qian, Haisheng
Hu, Guangxi
Hu, Laigui
Zhou, Xing
Liu, Ran
Zheng, Lirong
format Conference or Workshop Item
author Qian, Haisheng
Hu, Guangxi
Hu, Laigui
Zhou, Xing
Liu, Ran
Zheng, Lirong
author_sort Qian, Haisheng
title Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
title_short Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
title_full Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
title_fullStr Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
title_full_unstemmed Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
title_sort analytical models for channel potential and drain current in algan/gan hemt devices
publishDate 2020
url https://hdl.handle.net/10356/140470
_version_ 1681059553504919552

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