Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices

• Main Authors: Qian, Haisheng, Hu, Guangxi, Hu, Laigui, Zhou, Xing, Liu, Ran, Zheng, Lirong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Logic Gates; Aluminum Gallium Nitride
• Online Access: https://hdl.handle.net/10356/140470
• Institution: Nanyang Technological University

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices are obtained. The analytical model results are verified against simulations, good agreements are observed. The explicit expression for drain current make the model suitable to be embedded in circuit simulation and de...