InSe monolayer : synthesis, structure and ultra-high second-harmonic generation
III–IV layered materials such as indium selenide have excellent photoelectronic properties. However, synthesis of materials in such group, especially with a controlled thickness down to monolayer, still remains challenging. Herein, we demonstrate the successful synthesis of monolayer InSe by physica...
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Main Authors: | Zhou, Jiadong, Shi, Jia, Zeng, Qingsheng, Chen, Yu, Niu, Lin, Liu, Fucai, Yu, Ting, Suenaga, Kazu, Liu, Xinfeng, Lin, Junhao, Liu, Zheng |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/140641 |
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Institution: | Nanyang Technological University |
Language: | English |
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