RF performance of a highly linear power amplifier EDNMOS transistor on trap-rich SOI

• المؤلفون الرئيسيون: Toh, Rui Tze, Ang, Diing Shenp, Parthasarathy, Shyam, Wong, Jen Shuang, Yap, Hin Kiong, Zhang, Shaoqiang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; EDMOS; Kink Effect
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/141467

Results specific to power amplifiers (PAs) designed using a SOI EDNMOS transistor free of kinks in ID-VD plane and high breakdown voltage are presented. The suppression of the drain current kink and improvement in breakdown voltage are achieved by the omission of the N+ source implant step. Instead,...