GaAs/AlAs/AlGaAs quantum well infrared photodetector

• المؤلف الرئيسي: Fan, Weijun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Research Report
• اللغة: English
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/14184
• المؤسسة: Nanyang Technological University

The objective of this project is to calculate and analyze the subband energy levels in quantum wells of GaAs/AlGaAs and GaAs/AlAs/AlGaAs with eight-band K·P modes, and to design Quantum Well Infrared Photodectors (QWIP) from the two kinds of QWs, and to evaluate the performance of two kinds of QWIPs...