Material characterizations of high refractive films for active waveguide

Material characterizations of high refractive films for active waveguide

The fabrication of SiON and Erbium (Er) doped SiON films have been successfully developed using the sputtering and co-sputtering techniques. The properties of the films such as the optical properties, the compositions, the chemical bonds and the microstructures, have been well characterized and s...

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Bibliographic Details
Main Author: Kantisara Pita.
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
Online Access:http://hdl.handle.net/10356/14234
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Institution: Nanyang Technological University
Language: English
Description
Summary:The fabrication of SiON and Erbium (Er) doped SiON films have been successfully developed using the sputtering and co-sputtering techniques. The properties of the films such as the optical properties, the compositions, the chemical bonds and the microstructures, have been well characterized and studied using the spectroscopy ellipsometry, Rutherford Backscattering, Fourier Transform Infrared and Raman spectroscopy/XRD measurements respectively. Low optical films with desired refractive index, in the range of 1.47 – 1.81 at 1550 nm, and compositions can be easily fabricated.

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