Material characterizations of high refractive films for active waveguide
The fabrication of SiON and Erbium (Er) doped SiON films have been successfully developed using the sputtering and co-sputtering techniques. The properties of the films such as the optical properties, the compositions, the chemical bonds and the microstructures, have been well characterized and s...
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sg-ntu-dr.10356-142342023-03-04T03:22:48Z Material characterizations of high refractive films for active waveguide Kantisara Pita. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio The fabrication of SiON and Erbium (Er) doped SiON films have been successfully developed using the sputtering and co-sputtering techniques. The properties of the films such as the optical properties, the compositions, the chemical bonds and the microstructures, have been well characterized and studied using the spectroscopy ellipsometry, Rutherford Backscattering, Fourier Transform Infrared and Raman spectroscopy/XRD measurements respectively. Low optical films with desired refractive index, in the range of 1.47 – 1.81 at 1550 nm, and compositions can be easily fabricated. 2008-11-06T06:24:43Z 2008-11-06T06:24:43Z 2007 2007 Research Report http://hdl.handle.net/10356/14234 en 32 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio Kantisara Pita. Material characterizations of high refractive films for active waveguide |
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The fabrication of SiON and Erbium (Er) doped SiON films have been successfully
developed using the sputtering and co-sputtering techniques. The properties of the films
such as the optical properties, the compositions, the chemical bonds and the
microstructures, have been well characterized and studied using the spectroscopy
ellipsometry, Rutherford Backscattering, Fourier Transform Infrared and Raman
spectroscopy/XRD measurements respectively. Low optical films with desired refractive
index, in the range of 1.47 – 1.81 at 1550 nm, and compositions can be easily fabricated. |
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School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Kantisara Pita. |
format |
Research Report |
author |
Kantisara Pita. |
author_sort |
Kantisara Pita. |
title |
Material characterizations of high refractive films for active waveguide |
title_short |
Material characterizations of high refractive films for active waveguide |
title_full |
Material characterizations of high refractive films for active waveguide |
title_fullStr |
Material characterizations of high refractive films for active waveguide |
title_full_unstemmed |
Material characterizations of high refractive films for active waveguide |
title_sort |
material characterizations of high refractive films for active waveguide |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/14234 |
_version_ |
1759856134133383168 |