Control of the metal-to-insulator transition by substrate orientation in nickelates

Control of the metal-to-insulator transition by substrate orientation in nickelates

We proved that the critical thickness for metal-to-insulator transition (MIT) of LaNiO3 could be controlled by substrate orientation. By means of density functional theory calculations, films grown on SrTiO3 substrates with (001), (110) and (111) orientations have different amount of charge transfer...

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Bibliographic Details
Main Authors: Peng, Jingjing, Ouyang, Bin, Liu, H. Y., Hao, Changshan, Tang, S. S., Gu, Y. D., Yan, Y.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2020
Subjects:
Science::Physics
Metal-to-insulator Transition
Nickelates
Online Access:https://hdl.handle.net/10356/143154
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Institution: Nanyang Technological University
Language: English
Description
Summary:We proved that the critical thickness for metal-to-insulator transition (MIT) of LaNiO3 could be controlled by substrate orientation. By means of density functional theory calculations, films grown on SrTiO3 substrates with (001), (110) and (111) orientations have different amount of charge transfer across the interface. Different charge transfer induces different interfacial conductivity behavior and at the same time modifies the carrier density of adjacent LaNiO3 films. The manipulation of MIT by substrate orientation can be achieved through interfacial charge transfer induced interfacial conductive layer with the modified conductivity of LNO layer.

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