Cu-Cu bonding in ambient environment by Ar/N 2 plasma surface activation and its characterization
Ar/N 2 plasma surface activation in ambient environment for Cu-Cu bonding has been performed and characterized. Cu-Cu bonding occurs at room temperature and under normal atmospheric conditions. Postbonding annealing is performed at 300 °C and below to control the overall thermal budget. Shear streng...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/143486 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Ar/N 2 plasma surface activation in ambient environment for Cu-Cu bonding has been performed and characterized. Cu-Cu bonding occurs at room temperature and under normal atmospheric conditions. Postbonding annealing is performed at 300 °C and below to control the overall thermal budget. Shear strength and hermeticity property of samples with varying annealing temperature are investigated. Samples annealed at 250 °C demonstrate the highest average shear strength of 20.3 MPa and the lowest average helium leak rate of 8.7×10 -9 atm cc/s. Daisy chain structures are used to examine the electrical property of sample bonded at 300 °C, and the temperature cycling tests from -40 °C to 125 °C for 1000 cycles have been performed for the reliability assessment. It is observed that the dies are well-bonded and intact after 1000 cycles even though the exposed Cu surface is heavily oxidized. |
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