Time evolution study of Ar/N₂ plasma-activated Cu surface for Cu-Cu direct bonding in a non-vacuum environment

• Main Authors: Hu, Liangxing, Goh, Simon Chun Kiat, Tao, Jing, Lim, Yu Dian, Zhao, Peng, Lim, Michael Joo Zhong, Salim, Teddy, Velayutham, Uvarajan M., Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; Wafer Bonding; Plasma Activation
• Online Access: https://hdl.handle.net/10356/153397
• Institution: Nanyang Technological University

In this paper, a two-step copper-copper direct bonding process in a non-vacuum environment is reported. Time-dependent evolution of argon/nitrogen plasma-activated copper surface is carefully studied. A multitude of surface characterizations are performed to investigate the evolution of the copper s...