A 311.6 GHz phase-locked loop in 0.13 μm SiGe BiCMOS process with –90 dBc/Hz in-band phase noise
Using a quadrature XOR-gate (QXOR) reduces the second order harmonic term at the output, making it suitable to be used as a phase/frequency detector in high-frequency phase-locked loops. This paper introduces a 320 GHz PLL employing QXOR to cancel the reference spur, suppress in-band noise, and also...
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sg-ntu-dr.10356-1437132020-09-18T02:59:54Z A 311.6 GHz phase-locked loop in 0.13 μm SiGe BiCMOS process with –90 dBc/Hz in-band phase noise Liang, Yuan Boon, Chirn Chye Chen, Qian Liu, Zhe Li, Chenyang Mausolf, Thomas Kissinger, Dietmar Wang, Yong Ng, Herman Jalli School of Electrical and Electronic Engineering The IEEE MTT-S International Microwave Symposium (IMS 2020) Centre for Integrated Circuits and Systems Engineering::Electrical and electronic engineering::Integrated circuits Terahertz Quadrature XOR Phase Detector Using a quadrature XOR-gate (QXOR) reduces the second order harmonic term at the output, making it suitable to be used as a phase/frequency detector in high-frequency phase-locked loops. This paper introduces a 320 GHz PLL employing QXOR to cancel the reference spur, suppress in-band noise, and also reduces the power consumption of the frequency tracking loop (FTL). The beat frequency of FTL enables the lock detector (LD) to search the right band for VCO operation. The proposed PLL was implemented in IHP 0.13 μm SiGe BiCMOS process. Measured results show that the PLL achieves a locking range from 307.45 GHz to 321.28 GHz, while consuming 372 mW DC power, with −113.7 dBc/Hz phase noise at 1 MHz offset measured at 40.96 GHz. This leads to an integrated RMS jitter (1k−30MHz) of 72 fs. The measured phase noise at 311.6 GHz is –90 dBc/Hz at 1 MHz offset, with a total division ratio of 512. The measured maximum probed output power is –3.3 dBm. The PLL occupies a 1.4 mm2 area. Ministry of Education (MOE) Accepted version This work was supported by the Singapore Ministry of Education Academic Research Fund Tier 2 (MOE2019-T2-1-114). 2020-09-18T02:59:54Z 2020-09-18T02:59:54Z 2020 Conference Paper Liang, Y., Boon, C. C., Chen, Q., Liu, Z., Li, C., Mausolf, T., ... Ng, H. J. (2020). A 311.6 GHz phase-locked loop in 0.13 μm SiGe BiCMOS process with –90 dBc/Hz in-band phase noise. The IEEE MTT-S International Microwave Symposium (IMS 2020). https://ims-ieee.org/ https://hdl.handle.net/10356/143713 en MOE2019-T2-1-114 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. application/pdf |
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Engineering::Electrical and electronic engineering::Integrated circuits Terahertz Quadrature XOR Phase Detector Liang, Yuan Boon, Chirn Chye Chen, Qian Liu, Zhe Li, Chenyang Mausolf, Thomas Kissinger, Dietmar Wang, Yong Ng, Herman Jalli A 311.6 GHz phase-locked loop in 0.13 μm SiGe BiCMOS process with –90 dBc/Hz in-band phase noise |
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Using a quadrature XOR-gate (QXOR) reduces the second order harmonic term at the output, making it suitable to be used as a phase/frequency detector in high-frequency phase-locked loops. This paper introduces a 320 GHz PLL employing QXOR to cancel the reference spur, suppress in-band noise, and also reduces the power consumption of the frequency tracking loop (FTL). The beat frequency of FTL enables the lock detector (LD) to search the right band for VCO operation. The proposed PLL was implemented in IHP 0.13 μm SiGe BiCMOS process. Measured results show that the PLL achieves a locking range from 307.45 GHz to 321.28 GHz, while consuming 372 mW DC power, with −113.7 dBc/Hz phase noise at 1 MHz offset measured at 40.96 GHz. This leads to an integrated RMS jitter (1k−30MHz) of 72 fs. The measured phase noise at 311.6 GHz is –90 dBc/Hz at 1 MHz offset, with a total division ratio of 512. The measured maximum probed output power is –3.3 dBm. The PLL occupies a 1.4 mm2 area. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Liang, Yuan Boon, Chirn Chye Chen, Qian Liu, Zhe Li, Chenyang Mausolf, Thomas Kissinger, Dietmar Wang, Yong Ng, Herman Jalli |
format |
Conference or Workshop Item |
author |
Liang, Yuan Boon, Chirn Chye Chen, Qian Liu, Zhe Li, Chenyang Mausolf, Thomas Kissinger, Dietmar Wang, Yong Ng, Herman Jalli |
author_sort |
Liang, Yuan |
title |
A 311.6 GHz phase-locked loop in 0.13 μm SiGe BiCMOS process with –90 dBc/Hz in-band phase noise |
title_short |
A 311.6 GHz phase-locked loop in 0.13 μm SiGe BiCMOS process with –90 dBc/Hz in-band phase noise |
title_full |
A 311.6 GHz phase-locked loop in 0.13 μm SiGe BiCMOS process with –90 dBc/Hz in-band phase noise |
title_fullStr |
A 311.6 GHz phase-locked loop in 0.13 μm SiGe BiCMOS process with –90 dBc/Hz in-band phase noise |
title_full_unstemmed |
A 311.6 GHz phase-locked loop in 0.13 μm SiGe BiCMOS process with –90 dBc/Hz in-band phase noise |
title_sort |
311.6 ghz phase-locked loop in 0.13 μm sige bicmos process with –90 dbc/hz in-band phase noise |
publishDate |
2020 |
url |
https://ims-ieee.org/ https://hdl.handle.net/10356/143713 |
_version_ |
1681059385379389440 |