The theoretical optical gain of Ge1−xSnx nanowires

• المؤلفون الرئيسيون: Xiong, Wen, Fan, Weijun, Song, Zhigang, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Materials Science and Engineering; Electronic Structure; Optical Gain
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/143847

The electronic structures of Ge1−xSnx nanowires at the direct Γ‐valley and indirect L‐valley is calculated using k·p effective‐mass theory, and the results demonstrate that Ge1−xSnx nanowires with large diameter and Sn content can easily be engineered to be the direct‐band‐gap semiconductor. Further...