Electronic band structure and effective mass parameters of Ge1−xSnx alloys

Electronic band structure and effective mass parameters of Ge1−xSnx alloys

This work investigates the electronic band structures of bulk Ge1-xSnx alloys using the empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The adjustable form factors of EPM were tuned in order to reproduce the band features that agree well with the reported experimen...

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Bibliographic Details
Main Authors: Low, Kain Lu, Yang, Yue, Han, Genquan, Fan, Weijun, Yeo, Yee-Chia
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/96880
http://hdl.handle.net/10220/10110
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/96880
http://hdl.handle.net/10220/10110

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