Electronic band structure and effective mass parameters of Ge1−xSnx alloys

• المؤلفون الرئيسيون: Low, Kain Lu, Yang, Yue, Han, Genquan, Fan, Weijun, Yeo, Yee-Chia
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96880; http://hdl.handle.net/10220/10110

This work investigates the electronic band structures of bulk Ge1-xSnx alloys using the empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The adjustable form factors of EPM were tuned in order to reproduce the band features that agree well with the reported experimen...