Electronic band structure of Ge1-xSnx alloys
Semiconductor alloys have been widely used in engineering and the different material properties can be obtained by changing the composition of the alloy. Ge and Si are extensively used in electronic devices. However, the indirect nature of the band gap of group IV materials is the mainly limitati...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2018
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| Online Access: | http://hdl.handle.net/10356/76088 |
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| Institution: | Nanyang Technological University |
| Language: | English |