Electronic band structure of Ge1-xSnx alloys

Semiconductor alloys have been widely used in engineering and the different material properties can be obtained by changing the composition of the alloy. Ge and Si are extensively used in electronic devices. However, the indirect nature of the band gap of group IV materials is the mainly limitati...

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Main Author:	Yu, Cunyang
Other Authors:	Zhang Dao Hua
Format:	Theses and Dissertations
Language:	English
Published:	2018
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	http://hdl.handle.net/10356/76088
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Institution:	Nanyang Technological University
Language:	English

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record_format	dspace
spelling	sg-ntu-dr.10356-760882023-07-04T15:41:33Z Electronic band structure of Ge1-xSnx alloys Yu, Cunyang Zhang Dao Hua School of Electrical and Electronic Engineering Technical University of Munich DRNTU::Engineering::Electrical and electronic engineering Semiconductor alloys have been widely used in engineering and the different material properties can be obtained by changing the composition of the alloy. Ge and Si are extensively used in electronic devices. However, the indirect nature of the band gap of group IV materials is the mainly limitation for the application in the optoelectronics. Ge1-xSnx is a promising alloy to tune the nature of indirect band gap to direct bandgap by tuning the composition of Sn. This project is to investigate the electronic band structure of Ge1-xSnx in different composition of Sn and the influence of the change of other parameters such as temperature and tensile. The k.p method will be used to calculate the band edge dispersion at Γ-point. Master of Science (Green Electronics) 2018-10-24T04:28:14Z 2018-10-24T04:28:14Z 2018 Thesis http://hdl.handle.net/10356/76088 en 75 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Yu, Cunyang Electronic band structure of Ge1-xSnx alloys
description	Semiconductor alloys have been widely used in engineering and the different material properties can be obtained by changing the composition of the alloy. Ge and Si are extensively used in electronic devices. However, the indirect nature of the band gap of group IV materials is the mainly limitation for the application in the optoelectronics. Ge1-xSnx is a promising alloy to tune the nature of indirect band gap to direct bandgap by tuning the composition of Sn. This project is to investigate the electronic band structure of Ge1-xSnx in different composition of Sn and the influence of the change of other parameters such as temperature and tensile. The k.p method will be used to calculate the band edge dispersion at Γ-point.
author2	Zhang Dao Hua
author_facet	Zhang Dao Hua Yu, Cunyang
format	Theses and Dissertations
author	Yu, Cunyang
author_sort	Yu, Cunyang
title	Electronic band structure of Ge1-xSnx alloys
title_short	Electronic band structure of Ge1-xSnx alloys
title_full	Electronic band structure of Ge1-xSnx alloys
title_fullStr	Electronic band structure of Ge1-xSnx alloys
title_full_unstemmed	Electronic band structure of Ge1-xSnx alloys
title_sort	electronic band structure of ge1-xsnx alloys
publishDate	2018
url	http://hdl.handle.net/10356/76088
_version_	1772827261647454208

Electronic band structure of Ge1-xSnx alloys

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