Electronic band structure of Ge1-xSnx alloys

• Main Author: Yu, Cunyang
• Other Authors: Zhang Dao Hua
• Format: Theses and Dissertations
• Language: English
• Published: 2018
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/76088
• Institution: Nanyang Technological University

Semiconductor alloys have been widely used in engineering and the different material properties can be obtained by changing the composition of the alloy. Ge and Si are extensively used in electronic devices. However, the indirect nature of the band gap of group IV materials is the mainly limitati...