The theoretical optical gain of Ge1−xSnx nanowires

• Main Authors: Xiong, Wen, Fan, Weijun, Song, Zhigang, Tan, Chuan Seng
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2020
• 主題: Materials Science and Engineering; Electronic Structure; Optical Gain
• 在線閱讀: https://hdl.handle.net/10356/143847

The electronic structures of Ge1−xSnx nanowires at the direct Γ‐valley and indirect L‐valley is calculated using k·p effective‐mass theory, and the results demonstrate that Ge1−xSnx nanowires with large diameter and Sn content can easily be engineered to be the direct‐band‐gap semiconductor. Further...