Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway

• المؤلفون الرئيسيون: Yao, Zizhu, Pan, Liang, Liu, Lizhen, Zhang, Jindan, Lin, Quanjie, Ye, Yingxiang, Zhang, Zhangjing, Xiang, Shengchang, Chen, Banglin
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Resistive Random-access Memory (RRAM); Hydrogen Bond Pathway
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/143922
• المؤسسة: Nanyang Technological University

Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for information storage, simultaneous implementation of resistive switching and rectification effects, and a better understanding of switching mechanism are still...