A low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications
In this paper, a generic, low-noise, negative-voltage generator with wide tuning range and moderate driving capacity is presented. The highly integrated solution, incorporating a fully-integrated charge-pump and a regulator block, requires only one off-chip capacitor that can be shared with the sup...
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sg-ntu-dr.10356-1441452020-10-16T01:26:01Z A low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications Khanna, Devrishi Boon, Chirn Chye Choi, Pilsoon Siek, Liter Liu, Bei Li, Chenyang School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Regulated Negative Voltage Generator Gallium Nitride (GaN) Power Amplifier (PA) Biasing In this paper, a generic, low-noise, negative-voltage generator with wide tuning range and moderate driving capacity is presented. The highly integrated solution, incorporating a fully-integrated charge-pump and a regulator block, requires only one off-chip capacitor that can be shared with the supply decoupling capacitors. The fully integrated charge-pump operation is analyzed quantitatively, and a closed-form expression of its output impedance is derived. Powered from a single 3.3-V dc input, the output has a tuning range from −4.4 to +2.1 V for biasing applications, while the design supports a maximum load current of 250, 550, and 800 µA for the regulated output voltage at −3.0, −1.5, and 1.5 V, respectively. The measured steady-state ripple is under 3 mVPP, while the noise voltage at the charge-pump operating frequency harmonics is below 130 µVrms and the noise floor is under 5 µVrms. The design is also the application verified with a gallium nitride power amplifier, thus further confirming its low-noise performance. Implemented in CMOS 180-nm process, the prototype chip occupies an area of 0.55 mm2. Accepted version 2020-10-16T01:26:01Z 2020-10-16T01:26:01Z 2019 Journal Article Khanna, D., Boon, C. C., Choi, P., Siek, L., Liu, B., & Li, C. (2019). A low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications. IEEE Transactions on Circuits and Systems I: Regular Papers, 66(9), 3423-3436. doi:10.1109/TCSI.2019.2927117 1549-8328 https://hdl.handle.net/10356/144145 10.1109/TCSI.2019.2927117 9 66 3423 3436 en IEEE Transactions on Circuits and Systems I: Regular Papers © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/TCSI.2019.2927117 application/pdf |
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Engineering::Electrical and electronic engineering Regulated Negative Voltage Generator Gallium Nitride (GaN) Power Amplifier (PA) Biasing Khanna, Devrishi Boon, Chirn Chye Choi, Pilsoon Siek, Liter Liu, Bei Li, Chenyang A low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications |
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In this paper, a generic, low-noise, negative-voltage generator with wide tuning range and moderate driving capacity is presented. The highly integrated solution, incorporating a fully-integrated charge-pump and a regulator block, requires
only one off-chip capacitor that can be shared with the supply decoupling capacitors. The fully integrated charge-pump operation is analyzed quantitatively, and a closed-form expression of its output impedance is derived. Powered from a single 3.3-V
dc input, the output has a tuning range from −4.4 to +2.1 V for biasing applications, while the design supports a maximum load current of 250, 550, and 800 µA for the regulated output voltage at −3.0, −1.5, and 1.5 V, respectively. The measured
steady-state ripple is under 3 mVPP, while the noise voltage at the charge-pump operating frequency harmonics is below 130 µVrms and the noise floor is under 5 µVrms. The design is also the application verified with a gallium nitride power amplifier, thus further confirming its low-noise performance. Implemented in
CMOS 180-nm process, the prototype chip occupies an area of 0.55 mm2. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Khanna, Devrishi Boon, Chirn Chye Choi, Pilsoon Siek, Liter Liu, Bei Li, Chenyang |
format |
Article |
author |
Khanna, Devrishi Boon, Chirn Chye Choi, Pilsoon Siek, Liter Liu, Bei Li, Chenyang |
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Khanna, Devrishi |
title |
A low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications |
title_short |
A low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications |
title_full |
A low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications |
title_fullStr |
A low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications |
title_full_unstemmed |
A low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications |
title_sort |
low-noise, positive-input, negative-output voltage generator for low-to-moderate driving capacity applications |
publishDate |
2020 |
url |
https://hdl.handle.net/10356/144145 |
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1683492929866301440 |